indus t rial po wer c o ntrol silicon carbide schottky diode final da ta s heet rev. 2 .0 2014 - 0 6 - 10 idw15g 120c5 b 5 th generation thinq!? 1200 v sic schottky diode
1) j - std20 and jesd22 final data sheet 2 rev. 2 .0 , 20 14 - 0 6 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b thinq! tm sic schottky diode features : ? revolutionary semiconductor material - silicon carbide ? no reverse recovery current / no forward recovery ? t emperature independent switching behavior ? low forward voltage even at high operating temperature ? tight forward voltage distribution ? excellent thermal performance ? extended surge current capability ? specified dv/dt ruggedness ? qualified acc ording to jedec 1) for target applications ? pb - free lead plating; rohs compliant benefits ? system efficiency improvement over si diodes ? e nabling higher frequency / increased power density solutions ? system size /cost savings due to reduced heatsink requirements and smaller magnetics ? reduced emi ? highest efficiency across the entire load range ? robust diode operation during surge events ? high reliability ? relatedlinks: www.infineon.com/sic applications ? solar inverters ? u ninterruptable power supplies ? m otor drives ? power factor correction package pin definitions ? pin 1 C anode 1 ? pin 2 and backside C cathode ? pin 3 C anode 2 key performance and package parameter s (leg/device) type v dc i f q c t j,max marking package idw1 5 g120c5b 1200v 7. 5 / 1 5 a 41 / 82 nc 175c d1 5 12b5 pg - to247 - 3 1 2 3 case
final data sheet 3 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b table of contents description. ................................ ................................ ................................ ................................ ............. 2 table of contents ................................ ................................ ................................ ................................ ........ 3 maximum ratings ................................ ................................ ................................ ................................ ......... 4 thermal resistances ................................ ................................ ................................ ................................ .. 4 electrical characteristics ................................ ................................ ................................ ............................. 5 electrical characteristics diagram ................................ ................................ ................................ .............. 6 package drawings ................................ ................................ ................................ ................................ ...... 9 revision history ................................ ................................ ................................ ................................ ........ 10 disclaimer . ................................ ................................ ................................ ................................ ............. 10
final data sheet 4 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b maximum ratings parameter symbol value (leg/device) unit repetitive peak reverse voltage v rrm 1200 v continuous forward current for r th (j - c ,max ) t c = 15 4 c, d=1 t c = 135c, d=1 t c = 25c, d=1 i f 7. 5 / 1 5 11 / 23 24 / 4 9 a surge non - repetitive forward current, sine halfwave t c =25c, t p =10ms t c =150c, t p =10ms i f,sm 85 / 1 7 0 80 / 16 0 a non - repetitive peak forward current t c = 2 5 c, t p =10 s i f,max 711 / 1 422 a i2t value t c = 25c, t p =10 ms t c = 150c, t p =10 ms i2dt 3 6 / 143 32 / 128 a2s diode d v /d t ruggedness v r =0. . .960 v d v /d t 80 v/ns power dissipation for r th(j - c,max) t c = 25c p tot 100 / 200 w operating and storage temperature t j ;t stg - 55 175 c soldering temperature, wavesoldering only allowed at leads 1.6mm (0.063 in.) from case for 10 s t sold 260 c mounting torque m3 and m 4 screws m 0. 7 nm thermal resistances parameter symbol conditions value (leg/device) unit min. typ. max. characteristic diode thermal resistance, junction C case r th(j - c) - 1. 1 /0. 6 1.5 / 0 . 8 k/w thermal resistance, junction C ambient r th(j - a) leaded - - 62 k/w
final data sheet 5 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b electrical characteristics static characteristic , at tj=25c, unless otherwise specified parameter symbol conditions value (leg/device) unit min. typ. max. dc blocking voltage v dc t j = 25c 1200 - - v diode forward voltage v f i f = 7.5/ 1 5 a, t j =25c i f = 7.5/ 1 5 a, t j =150c - - 1.4 1. 7 1.65 2 . 30 v reverse current i r v r =1200 v, t j =25c v r =1200 v, t j =150c 4 / 8 22 / 44 62 / 124 320 / 640 a dynamic characteristics , at t j =25c, unless otherwise specified parameter symbol conditions value (leg/device) unit min. typ. max. total capacitive charge q c v r = 8 00 v, t j =150c & 25c - 41 / 82 - nc total capacitance c v r =1 v, f =1 mhz v r =400 v, f =1 mhz v r =800 v, f =1 mhz - - - 525 / 105 0 37 / 74 2 9 / 59 - - - pf ? ? r v c dv v c q 0 ) (
final data sheet 6 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b electrical characteristics diagram s figure 1 . power dissipation per leg as function of case temperature, p tot =f( t c ), r th(j - c),max figure 2 . diode forward current per leg as function of temperature , parameter: t j 175c, r th(j - c),max , d =duty cycle, v th , r diff @ t j =175c figure 3 . typical forward characteristics per leg, i f =f( v f ), t p = 10 s, parameter: t j figure 4 . typical forward characteristic s in surge current per leg, i f =f( v f ) , t p = 10 s , parameter: t j per leg per leg per leg per leg 0 20 40 60 80 100 120 25 50 75 100 125 150 175 p [w] t c [ c] 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 i f [a] t c [ c] d= 0.10 d= 0.30 d= 0.50 d= 0.70 d= 1.00 0 2 4 6 8 10 12 14 0 0.5 1 1.5 2 2.5 i f [a] v f [v] - 55 c 25 c 100 c 150 c 175 c 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 i f [a] v f [v] - 55 c 25 c 100 c 150 c 175 c
final data sheet 7 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b figure 5 . typical capacit ive charge per leg as function of current slope 1 , q c =f( di f / dt ), t j = 150c 1) guaranteed by design. figure 6 . typical reverse characteristics per leg , i r =f( v r ), parameter: t j figure 7 . max. transient thermal impedance per leg, z th,j - c =f( t p ) , parameter: d= t p / t figure 8 . typical capacitance per leg as function of reverse voltage, c= f( v r ); t j =25 c; f =1 mhz per leg per leg 0 5 10 15 20 25 30 35 40 45 100 400 700 1000 q c [nc] di f /dt [a/s] 1.e - 09 1.e - 08 1.e - 07 1.e - 06 1.e - 05 1.e - 04 200 400 600 800 1000 1200 i r [a] v r [v] - 55 c 25 c 100 c 150 c 175 c 0.01 0.1 1 1e - 6 1e - 3 1e0 z thjc [k/w] tp [s] d= 0.50 d= 0.20 d= 0.10 d= 0.05 d= 0.02 d= 0.01 single pulse 0 100 200 300 400 500 600 700 0 1 10 100 1000 c [pf] v r [v]
final data sheet 8 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b figure 9 . typical capacit ively stored energy as function of reverse voltage , per leg , e c =f( v r ) 0 5 10 15 20 25 0 200 400 600 800 1000 1200 e c [j] v r [v]
final data sheet 9 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b package drawings
final data sheet 10 rev. 2 .0 , 20 14 - 06 - 10 5 th generation thinq!? 1200 v sic schottky diode idw1 5 g120c5b revision history disclaimer we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com published by infineon technologies ag 81726 munich, germany ? 201 4 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values st ated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rig hts of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - sup port devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. iidw1 5 g120c5b revision: 2014 - 0 6 - 10 , rev. 2 .0 previous revision: revision date subjects (major changes since last version) 2 .0 - final data sheet
|
